Polycrystalline or amorphous semiconductor photovoltaic device h

Details Polycrystalline or amorphous semiconductor photovoltaic device h Polycrystalline or amorphous semiconductor photovoltaic device h

1976-05-20

1978-01-24

Mack, John H.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136 89PC, 136 89CC, 136 89SJ, 357 30, 29572, H01L 3106

Patent

active

040702065

ABSTRACT:
A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

REFERENCES:
patent: 2001672 (1935-05-01), Carpenter
patent: 3175929 (1965-03-01), Kleinman
patent: 3331707 (1967-07-01), Werth
patent: 3359137 (1967-12-01), Kaye et al.
patent: 3483039 (1967-12-01), Gault
patent: 3682708 (1972-08-01), Bennett
patent: 3990101 (1976-11-01), Ettenberg et al.
patent: 3994012 (1976-11-01), Warner, Jr.

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