Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-08-31
2009-06-16
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE21703, C257SE27111
Reexamination Certificate
active
07547919
ABSTRACT:
A polysilicon liquid crystal display (LCD) device having a large width channel includes a buffer layer formed on a substrate, an active layer formed on the buffer layer and having a plurality of heat releasing parts, a gate line formed in a width direction of the active layer, at least one heat releasing path formed in each of the plurality of heat releasing parts, source and drain electrodes symmetrically formed at both sides of the active layer, and a contact hole connecting the source and drain electrodes and the active layer.
REFERENCES:
patent: 5229643 (1993-07-01), Ohta et al.
patent: 6207481 (2001-03-01), Yi et al.
patent: 6835954 (2004-12-01), Park et al.
patent: 6930449 (2005-08-01), Sasatani et al.
patent: 6956237 (2005-10-01), Oh et al.
patent: 2002/0053672 (2002-05-01), Yamazaki et al.
Harrison Monica D
LG Display Co. Ltd.
Monbleau Davienne
Morgan & Lewis & Bockius, LLP
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