Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-05-24
2005-05-24
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S227000, C257S228000, C257S233000
Reexamination Certificate
active
06897498
ABSTRACT:
A photodetector for use with relatively thin (i.e., sub-micron) silicon optical waveguides formed in a silicon-on-insulator (SOI) structure comprises a layer of poly-germanium disposed to couple at least a portion of the optical signal propagating along the silicon optical waveguide. Tight confinement of the optical signal within the waveguide structure allows for efficient evanescent coupling into the poly-germanium detector. The silicon optical waveguide may comprise any desired geometry, with the poly-germanium detector formed to either cover a portion of the waveguide, or be butt-coupled to an end portion of the waveguide. When covering a portion of the waveguide, poly-germanium detector may comprise a “wrap-around” geometry to cover the side and top surfaces of the optical waveguide, with electrical contacts formed at opposing ends of the detector.
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Ghiron Margaret
Gothoskar Prakash
Montgomery Robert Keith
Patel Vipulkumar
Pathak Soham
Abraham Fetsum
SiOptical Inc.
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