Polycrystalline diode and a method for making the same

Details Polycrystalline diode and a method for making the same Polycrystalline diode and a method for making the same

1992-04-08

1992-12-01

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

H01L 2701, H01L 2713, H01L 2978

Patent

active

051683377

ABSTRACT:
A diode which includes a first region formed in a polycrystalline silicon layer formed on a substrate. The diode has a predetermined width W and is one of an intrinsic region and a region including impurities at a low concentration therein, a second region and a third region including P-type impurities and N-type impurities therein respectively and both being oppositely arranged from each other with the first region therebetween in the polycrystalline silicon layer. Electrodes are electrically connected to the second region and the third region respectively, and further the film characteristic of the polycrystalline silicon layer and the predetermined width W thereof are determined in such a manner as to fulfill the following equation:

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Gerzberg et al., IEEE Electron Device Letters, "A Quantitative Model of the Effect of Grain Size on the Resistivity of Polycrystalline Silicon Resistors", Mar. 1980, vol. EDL-1, No. 3.

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