Polycrystalline diamond substrate and process for producing the

Stock material or miscellaneous articles – Self-sustaining carbon mass or layer with impregnant or...

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428131, 428156, 428698, 428701, 428702, C30B 2504

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active

055019099

ABSTRACT:
A diamond substrate having a smooth surface, including a polycrystalline diamond film having a surface with a pit, and an insulating material other than diamond, which occupies the pit.

REFERENCES:
patent: 4707384 (1987-11-01), Schachner et al.
patent: 4863529 (1989-01-01), Imai et al.
patent: 5036373 (1991-07-01), Yamazaki
patent: 5082359 (1992-01-01), Kirkpatrick
patent: 5114696 (1992-05-01), Purdes
patent: 5131963 (1992-07-01), Raur
patent: 5144380 (1992-09-01), Kimoto et al.
patent: 5221501 (1993-06-01), Feldman et al.
patent: 5260141 (1993-11-01), Tsai et al.
A. Hiraki et al., Diamond-Like Carbon Thin films, 1987 (No. 128), pp. 41-49.
H. Nakahata et al., Study on High Frequency SAW Filter of (ZnO/Diamond/Si) Structure, p. 275.
IBM Technical Disclosure Bulletin, vol. 34, No. 3, Aug. 1991, New York US p. 54; Cuomo et al. `Improved surface smoothness of polycrystalline diamond`.
Patent Abstracts of Japan, vol. 11, No. 40 (P-544) 5 Feb. 1987 & JP-A-61 210 518 (Matsushita Electric Ind. Co.) 18 Sep. 1986.
Patent Abstracts of Japan vol. 16, No. 207 (C-0941) 18 May 1992 & JP-A-04 037 616 (Canon Inc.) 7 Feb. 1992.

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