Polycrystalline diamond and cemented carbide substrate and synth

Details Polycrystalline diamond and cemented carbide substrate and synth Polycrystalline diamond and cemented carbide substrate and synth

1981-01-05

1983-04-19

Rutledge, L. Dewayne

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Metal and nonmetal in final product

75230, 75237, 51307, 419 16, B22F 314, B22F 700, C04B 3116

Patent

active

043804713

ABSTRACT:
A polycrystalline diamond body infiltrated by a silicon atom-containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom-containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.

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