Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1998-12-07
2000-10-03
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 9, 117 10, 117929, 423446, C30B 2904
Patent
active
061267414
ABSTRACT:
A polycrystalline carbon body is converted to a different crystallography by directing an infrared laser beam at a crystal boundary interface. By using a beam having a 5.3 micron wavelength so as to fall within a 5-9 micron range of normal spectral transmittance of the carbon, the interface is heated for solid state conversion by passing the beam through a forward portion of the body without appreciably heating the forward portion. During heating, the interface propagates through the body, thus converting an ever-decreasing aft portion of the body to the different crystallography.
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patent: 5891241 (1999-04-01), Yoshida
Touloukian et al, "Thermal Radiative Properties, Nonmetallic Solids," Thermal Properties of Matter, vol. 8, 1972, pp: cover, 27, 28, and 1757.
Jones Marshall Gordon
Wang Hsin-Pang
General Electric Company
Kunemund Robert
Snyder Marvin
Stoner Douglas E.
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