Polycide local interconnect method and structure

Details Polycide local interconnect method and structure Polycide local interconnect method and structure

1992-08-20

1997-03-18

Fourson, George

Fishing, trapping, and vermin destroying

437200, H01L 2170

Patent

active

056122438

ABSTRACT:
A local interconnect comprises a doped, silicided amorphous or polysilicon layer 28. One interconnect 34, 35 extends between an isolated gate contact 60 and a source and drain 61 of an NMOS transistor 42. Another local interconnect 34, 37 extends between a source and a drain 62, 63 of CMOS transistors.

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