Polycide electrodes for integrated circuits

Details Polycide electrodes for integrated circuits Polycide electrodes for integrated circuits

1981-11-19

1987-10-13

Carroll, J.

357 59, 357 67, 357 6, H01L 2904, H01L 2348, H01L 4902

Patent

active

047002158

ABSTRACT:
A semiconductor integrated circuit has electrodes, contacts and interconnects composed of a multilayer structure including a layer of polycrystalline silicon with an overlying layer of a refractory metal silicide such as MoSi.sub.2 or WSi.sub.2. Adhesion of the metal silicide to the polysilicon is enhanced by forming a thin silicon oxide coating on the polysilicon before sputtering the metal silicide. The resulting structure has low resistance but retains the advantages of polysilicon on silicon.

REFERENCES:
patent: 4135295 (1979-01-01), Price
patent: 4322453 (1982-03-01), Miller
patent: 4329706 (1982-05-01), Powder et al.
patent: 4356622 (1982-11-01), Widmann
patent: 4378628 (1983-04-01), Levinstein et al.

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