Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2004-12-09
2010-06-29
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S079000
Reexamination Certificate
active
07745814
ABSTRACT:
A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
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Haase Michael A.
Miller Thomas J.
Sun Xiaoguang
3M Innovative Properties Company
Moshrefzadeh Robert S.
Nguyen Joseph
Parker Kenneth A
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