Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-04-17
2007-04-17
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257S530000, C438S353000, C438S466000, C438S467000, C438S132000
Reexamination Certificate
active
10537953
ABSTRACT:
A polysilicon silicide stringer fuse is constructed having a narrow width by using an overlay tolerance of the photo stepper tool instead of the minimum critical dimension tolerance of the stepper tool. In an example embodiment, a fuse (200) for integration within a semiconductor comprises depositing an insulating layer (205) adjacent to the semiconductor substrate (203). A silicon layer (201) is formed with a first silicon material having a first resistance deposited adjacent the insulating layer (205). The silicon layer has a first width. A metal silicide stringer (202), having a second resistance different from the first resistance is deposited over a portion of the first silicon material (201) and having a second width that is less than the first width within at least a portion thereof. The metal silicide conducts current therethrough with approximately the second resistance and agglomerates in response to a programming current other than the conduct current therethrough with a same second resistance.
REFERENCES:
patent: 4984054 (1991-01-01), Yamada et al.
patent: 6271574 (2001-08-01), Delpech et al.
patent: 0 445 317 (1991-09-01), None
patent: 1103858 (2001-05-01), None
Dondero Richard
Trotter Doug
Andujar Leonardo
Erdem Fazli
NXP B.V.
Zawilski Peter
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