Poly sidewall process to reduce gated diode leakage

Details Poly sidewall process to reduce gated diode leakage Poly sidewall process to reduce gated diode leakage

1990-12-05

1993-04-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 48, 437 52, H01L 21302, H01L 21311, H01L 2170

Patent

active

052022790

ABSTRACT:
A method of reducing gated diode leakage in trench capacitor type field plate isolated dynamic random access memory devices is disclosed. Trenches are etched into a face of a body of semiconductor material. Storage nodes surrounding the trenches are created. A polysilicon layer is formed on the trench walls. A storage dielectric layer is formed on the trench walls, adjacent to the layer of polysilicon on the trench walls, so that the layer of polysilicon on the trench walls lies between the storage dielectric layer and the storage node. The layer of polysilicon on the trench walls reduces leakage current from the storage node. A trench type field plate isolated random access memory cell structure is also disclosed.

REFERENCES:
patent: 4794563 (1988-12-01), Maeda
patent: 5077232 (1991-12-01), Kim et al.

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