Poly gate silicide inspection by back end etching and by...

Details Poly gate silicide inspection by back end etching and by... Poly gate silicide inspection by back end etching and by...

2005-06-14

2005-06-14

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S010000, C438S016000, C438S017000, C438S692000, C438S714000

Reexamination Certificate

active

06905890

ABSTRACT:
Under the first embodiment of the invention, back-end etching is applied to the specimen that needs to be inspected. Its surface is cleaned and mounted on a glass surface with the surface of the poly gate silicide that needs to be inspected being in contact with the surface of the glass. The exposed surface of the sample that is to be examined contains silicon, this silicon is removed. The gate oxide is then removed followed by the removal of the remaining poly of the gate structure. The second embodiment of the invention addresses poly gate inspection by enhanced (top surface of the gate electrode) gas etching of the gate electrode to remove gate oxide and silicon remains from the environment of the silicide. The specimen is etched back to the contact layer using a conventional Chemical Mechanical Polishing (CMP) process. The polished surface of the specimen is next exposed to XeF2, which selectively removes the oxide while the silicide remains in place.

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patent: 6252412 (2001-06-01), Talbot et al.
patent: 6482748 (2002-11-01), Chen et al.

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