Poly diode structure for photo diode

Details Poly diode structure for photo diode Poly diode structure for photo diode

2006-12-29

2008-10-21

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S432000, C257S461000, C257S458000, C257S656000, C257SE29336

Reexamination Certificate

active

07439597

ABSTRACT:
An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

REFERENCES:
patent: 5225359 (1993-07-01), DeLong
patent: 6232163 (2001-05-01), Voldman et al.
patent: 6690065 (2004-02-01), Chang et al.
patent: 2005/0077577 (2005-04-01), Manna et al.

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