Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-05-05
2000-12-12
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
438633, 438691, H01L 2128, H01L 21304
Patent
active
061603147
ABSTRACT:
A polishing stop structure has a polishing stop layer formed in the dielectric layer. When a chemical mechanical polishing is performed on a bumpy surface of this structure, the lower regions of the surface are first to expose the polishing stop layer, is not easily removed. While polishing stops at the lower regions, the higher regions continue to be polished. The structure can control the polishing level to increase the window of over-etching and attain a smoother surface.
REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5891799 (1999-04-01), Tsui
patent: 5926732 (1999-07-01), Matsuura
Chao Li-Chieh
Lee Tzung-Han
Monin, Jr. Donald L.
United Microelectronics Corp.
LandOfFree
Polishing stop structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polishing stop structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing stop structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-220827