Polishing stop structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

438633, 438691, H01L 2128, H01L 21304

Patent

active

061603147

ABSTRACT:
A polishing stop structure has a polishing stop layer formed in the dielectric layer. When a chemical mechanical polishing is performed on a bumpy surface of this structure, the lower regions of the surface are first to expose the polishing stop layer, is not easily removed. While polishing stops at the lower regions, the higher regions continue to be polished. The structure can control the polishing level to increase the window of over-etching and attain a smoother surface.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5741626 (1998-04-01), Jain et al.
patent: 5891799 (1999-04-01), Tsui
patent: 5926732 (1999-07-01), Matsuura

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