Polishing slurry and polishing method

Details Polishing slurry and polishing method Polishing slurry and polishing method

2009-02-04

2011-12-27

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C216S089000

Reexamination Certificate

active

08084363

ABSTRACT:
The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5502251 (1996-03-01), Pohmer et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6022400 (2000-02-01), Izumi et al.
patent: 6046110 (2000-04-01), Hirabayashi et al.
patent: 6432824 (2002-08-01), Yanagisawa
patent: 6432828 (2002-08-01), Kaufman et al.
patent: 6520840 (2003-02-01), Wang et al.
patent: 6547843 (2003-04-01), Shimazu et al.
patent: 6555510 (2003-04-01), Lamanna et al.
patent: 6670272 (2003-12-01), Wu et al.
patent: 6720264 (2004-04-01), Sahota et al.
patent: 6746498 (2004-06-01), Buehler
patent: 2001/0039766 (2001-11-01), Hattori et al.
patent: 2006/0216939 (2006-09-01), Uchida et al.
patent: 0 371 147 (1990-06-01), None
patent: 02-278822 (1990-11-01), None
patent: 05-112775 (1993-05-01), None
patent: 6-124946 (1994-05-01), None
patent: 07-183288 (1995-07-01), None
patent: 08-083780 (1996-03-01), None
patent: 09-055363 (1997-02-01), None
patent: 10-180937 (1998-07-01), None
patent: 2819196 (1998-08-01), None
patent: 10-270447 (1998-10-01), None
patent: 11-033896 (1999-02-01), None
patent: 2000-53946 (2000-02-01), None
patent: 2000-144109 (2000-05-01), None
patent: 2001-064631 (2001-03-01), None
patent: 2001-135601 (2001-05-01), None
patent: 2001-144060 (2001-05-01), None
patent: 2001-189295 (2001-07-01), None
patent: 2001-269859 (2001-10-01), None
patent: 2001-269860 (2001-10-01), None
patent: 2001-316691 (2001-11-01), None
patent: 2002-121541 (2002-04-01), None
patent: 2004-534396 (2004-11-01), None
patent: WO 89/12082 (1989-12-01), None
patent: WO 99/47618 (1999-09-01), None
patent: WO 00/00561 (2000-01-01), None
patent: WO 00/39844 (2000-07-01), None
patent: 01/04226 (2001-01-01), None
patent: 01/33620 (2001-05-01), None
patent: WO 01/44402 (2001-06-01), None
patent: WO 01/57919 (2001-08-01), None
patent: 02/102910 (2002-12-01), None
Japanese Office Action dated Mar. 30, 2010, issued in corresponding Japanese Patent Application No. 2007-304888.
Office Action, Notice of Reasons for Refusal dated Dec. 8, 2009 issued in corresponding Japanese Patent Application No. 2007-304888.
Kaufman F. B. et al., “Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects”, Journal of Electrochemical Society, vol. 138, No. 11 (Nov. 1991) (The Electrochemical Society, Inc.), pp. 3460-3465.
Chinese Office Action dated Dec. 8, 2006, issued in corresponding Chinese Patent Application No. 028265513.
Japanese Office Action dated Sep. 25, 2007, issued in corresponding Japanese Patent Application No. 2003-541040.
Japanese Office Action dated Jan. 8, 2008, issued in corresponding Japanese Patent Application No. 2003-541040.
Wijekoon et al., “Development of a Production Worthy Copper CMP Process,” IEEE Advanced Semiconductor Manufacturing Conference.
Japanese Office Action dated Dec. 15, 2010, issued in corresponding Japanese Patent Application No. 2010-14423.
Japanese Office Action dated Mar. 22, 2011, issuerd in corresponding Japanese Patent Application No. 2008-058740.
Japanese Office Action dated Jul. 26, 2011, issued in corresponding Japanese Patent Appplication No. 2007-304888.

Affiliated with

Also associated with

Rating

Polishing slurry and polishing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polishing slurry and polishing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing slurry and polishing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4314071