Polishing slurry and polishing method

Compositions – Etching or brightening compositions

Reexamination Certificate

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Details

C252S079200, C252S079300, C252S079400, C438S692000, C216S088000

Reexamination Certificate

active

08075800

ABSTRACT:
A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2and R3denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity.

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S. Wolf , (Silicon Processing for the VLSI Era, vol. 4—Deep Submicron Process Technology, Lattice Press, 2002, pp. 352).
Forms PCT/IB/338 and PCT/IPEA/409 of International Application PCT/JP2004/007746 mailed Dec. 1, 2005.
Ginya Adachi, Kidorui no Kagaku (Scien of Rare Earths), Kagaku-Dojin Publishing Company, pp. 304-305.

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