Polishing slurry and polishing method

Details Polishing slurry and polishing method Polishing slurry and polishing method

2011-08-09

2011-08-09

Sheikh, Humera (Department: 1789)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C216S089000, C252S079100

Reexamination Certificate

active

07994058

ABSTRACT:
The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

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