Polishing slurry and method of reclaiming wafers

Details Polishing slurry and method of reclaiming wafers Polishing slurry and method of reclaiming wafers

2005-05-16

2008-11-18

Norton, Nadine (Department: 1792)

Compositions

Etching or brightening compositions

C252S079400, C438S691000, C438S692000

Reexamination Certificate

active

07452481

ABSTRACT:
The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

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Helene Prigge, et al., “Acceptor Compensation in Silicon Induced by Chemomechanical Polishing”, J. Electrochemical Society, vol. 138, No. 5, May 1991, pp. 1385-1389.

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