Compositions – Etching or brightening compositions
Reexamination Certificate
2006-09-29
2009-06-30
Norton, Nadine G (Department: 1792)
Compositions
Etching or brightening compositions
C252S079200, C252S079300, C252S079400, C252S062000, C216S041000, C216S057000, C216S088000, C438S691000, C438S692000, C438S687000
Reexamination Certificate
active
07553430
ABSTRACT:
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3dissolved in an oxidizing agent, and particles of MoO2dissolved in an oxidizing agent.
REFERENCES:
patent: 5244534 (1993-09-01), Yu et al.
patent: 5318927 (1994-06-01), Sandhu et al.
patent: 5728308 (1998-03-01), Muroyama
patent: 5735963 (1998-04-01), Obeng
patent: 5770103 (1998-06-01), Wang et al.
patent: 5786275 (1998-07-01), Kubo
patent: 5836806 (1998-11-01), Cadien et al.
patent: 5954975 (1999-09-01), Cadien et al.
patent: 5958288 (1999-09-01), Mueller et al.
patent: 5981378 (1999-11-01), Bothra
patent: 5993686 (1999-11-01), Streinz et al.
patent: 5996594 (1999-12-01), Roy et al.
patent: 6017463 (2000-01-01), Woo et al.
patent: 6027997 (2000-02-01), Yu et al.
patent: 6046099 (2000-04-01), Cadien et al.
patent: 6093649 (2000-07-01), Roberts et al.
patent: 6117220 (2000-09-01), Kodama et al.
patent: 6143656 (2000-11-01), Yang et al.
patent: 6178585 (2001-01-01), Cadien et al.
patent: 6270395 (2001-08-01), Towery et al.
patent: 6284151 (2001-09-01), Krywanczyk et al.
patent: 6294105 (2001-09-01), Feeney et al.
patent: 6348076 (2002-02-01), Canaperi et al.
patent: 6358853 (2002-03-01), Cadien et al.
patent: 6362104 (2002-03-01), Wang et al.
patent: 6364744 (2002-04-01), Merchant et al.
patent: 6375545 (2002-04-01), Yano et al.
patent: 6375552 (2002-04-01), Cadien et al.
patent: 6419554 (2002-07-01), Chopra et al.
patent: 6448182 (2002-09-01), Hall et al.
patent: 6454819 (2002-09-01), Yano et al.
patent: 6511912 (2003-01-01), Chopra et al.
patent: 6520840 (2003-02-01), Wang et al.
patent: 6530968 (2003-03-01), Tsuchiya et al.
patent: 6544892 (2003-04-01), Her et al.
patent: 6548409 (2003-04-01), Lee et al.
patent: 6551172 (2003-04-01), Nyui et al.
patent: 6551935 (2003-04-01), Sinha et al.
patent: 6558570 (2003-05-01), Alwan et al.
patent: 6561883 (2003-05-01), Kondo et al.
patent: 6569350 (2003-05-01), Kaufman et al.
patent: 6585568 (2003-07-01), Tsuchiya et al.
patent: 6585786 (2003-07-01), Tsuchiya et al.
patent: 6589099 (2003-07-01), Haggart, Jr. et al.
patent: 6610114 (2003-08-01), Towery et al.
patent: 6660638 (2003-12-01), Wang et al.
patent: 6723143 (2004-04-01), Towery et al.
patent: 6726535 (2004-04-01), Shih et al.
patent: 6726990 (2004-04-01), Kumar et al.
patent: 6758872 (2004-07-01), Ota et al.
patent: 6805615 (2004-10-01), Robinson et al.
patent: 6863592 (2005-03-01), Lee et al.
patent: 6924227 (2005-08-01), Minamihaba et al.
patent: 2001/0013506 (2001-08-01), Chamberlin et al.
patent: 2001/0034979 (2001-11-01), Lee et al.
patent: 2001/0045063 (2001-11-01), Kambe et al.
patent: 2002/0051878 (2002-05-01), Lussier et al.
patent: 2002/0098701 (2002-07-01), Hasegawa
patent: 2003/0079416 (2003-05-01), Ma et al.
patent: 2003/0087525 (2003-05-01), Sinha et al.
patent: 2003/0166381 (2003-09-01), Lee et al.
patent: 2003/0194879 (2003-10-01), Small et al.
patent: 2003/0211747 (2003-11-01), Hegde et al.
patent: 2003/0226998 (2003-12-01), Grumbine
patent: 2004/0046148 (2004-03-01), Zhang et al.
patent: 2004/0244911 (2004-12-01), Lee et al.
patent: 0811665 (1997-12-01), None
patent: 0846742 (1998-06-01), None
patent: 1069168 (2001-01-01), None
patent: 1020488 (2001-05-01), None
patent: 1167482 (2002-01-01), None
patent: 1020501 (2004-01-01), None
patent: 1234010 (2004-03-01), None
patent: 59187457 (1984-10-01), None
patent: 200475859 (2004-03-01), None
patent: 9747030 (1997-12-01), None
patent: 0049647 (2000-08-01), None
patent: 01/32799 (2001-05-01), None
patent: 03015148 (2003-02-01), None
Tabata et al., Method of Polishing Semiconductor Base Board, Englsih Abstract of JP 59187457 A, Nov. 10, 1984, 2 pages.
Ammonium Molybdate MSDS, Flinn Scientific Inc., (Nov. 25, 2002) (2 pages).
Phosphomolybic Acid MSDS, EMS, (Jan. 25, 2002) (5 pages).
Material Safety Data Sheet for Sodium Molybdate ((2002) (pp. 1-3)).
Aramaki, et al., “Surface Enhanced Raman Scattering and Impedance Studies on the Inhibition of Copper Corrosion in Sulphate Solutions by 5-Substituted Benzotriazoles”, Corrosion Science, vol. 32, No. 5/6, 1991, pp. 593-607.
Aveston, et al., “Hydrolysis of Molybdenum(VI). Ultracentrifugation, Acidity Measurements, and Raman Spectra of Polymolybdates”, Hydrolysis of Molybdenum (VI), vol. 3, No. 5, 1964, pp. 735-746.
Bhuvanesh et al., “Solid-state chemistry of early transition-metal oxides containing Do and D1 cations” J. Mater. Chem., 1997, 7, pp. 2297-2306.
Busey, et al., Structure of the Aqueous Pertechnetate Ion by Rama and Infrared Spectroscopy. Raman and Infrared Spectra of Crystalline KTcO4, KReO4, Na2MoO4, Na2WO4, Na2MoO4, 2H2O, and Na2WO4, SH2O, J. of Chem. Physics, vol. 41, No. 1, 1964, pp. 215-225.
Du, et al., “Electrochemical characterization of copper chemical mechanical planarization in KIO3 slurry”, Applied Surface Sicence 229, 2004, pp. 167-174.
Gutmann, et al., “Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectrics”, Thin Solid Films 270, 1995, pp. 596-600.
Hariharaputhiran, et al., “Chemical Mechanical Polishing of Ta”, Electrochemical and Solid-State Letters, 3, 2000, pp. 95-98.
Hegde et al., “Removal of Shallow and Deep Scratches and Pits from Polished Copper Films”, Electrochemical and Solid-State Letters, 6, 2003, pp. G126-G129.
Jindal, et al., “Chemical Mechanical Polishing of Dielectric Films Using Mixed Abrasive Slurries”, J. of the Electrochemical Society, 150, 2003, pp. G314-G318.
Jindal, et al., “Chemical Mechanical Polishing Using Mixed Abrasive Slurries”, Electrochemical and Solid-State Letters, 5, 2002, pp. G48-G50.
Kallay, et al., “Adsorption at Solid/Solution Interfaces. 1. Interpretation of Surface Complexation of Oxalic and Citric Acids with Hematite”, Langmuir vol. 1, No. 2 , American Chemical Society, 1985, pp. 195-201.
Kamigata, et al., “Why abrasive free Cu slurry is promising” Mat. Res. Soc. Symp. Proc. vol. 671, 2001, Materials Research Society, pp. M1.3.1-M1.3.12.
Kaufman, et al., “Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects”, J.Electrochem. Soc. vol. 138, No. 11, Nov. 1991, pp. 3460-3465.
Keita, et al., “New Aspects of the Electrochemistry of Heteropolyacids, Part II. Coupled Electron and Proton Transfers in the Reduction of Silicotungstic Species”, J. Electroanal. Chem., 217, 1987, pp. 287-304.
Kondo, et al., “Abrasive-Free Polishing for Copper Damascene Interconnection”, J. of the electrochemical Society. 147, 2000, pp. 3907-3913.
Lakshminarayanan, et al., “Contact and Via Structures with Copper Interconnects Fabricated Using Dual Damascene Technology”, IEEE Electron Device Letters, vol. 15, No. 8, Aug. 1994, pp. 307-309.
Li, et al., “Chemical Mechanical Polishing of Copper and Tantalum in Potassium Iodate-Based Slurries”, Electrochemical and Solid-State Letters, 4, 2001, pp. G20-G22.
Y. Li, Mechanisms of Chemical-Mechanical Planarization of Copper/Tantalum Thin Films Using Fumed Silica Abrasives, Surface Topography, Ph.D. Dessertation, Clarkson University, Jan. 2001, pp. 123-126.
Liu, et al., “Preparation of Nano-sized Amorphous Molybdenum Dioxide Powders by Use of y-Ray Radiation Method”, Materials Research Bulletin, vol. 31, No. 8, 1996, pp. 1029-1033.
Luo, “Copper Dissolution Behavior in Acidic Iodate Solutions”, Langmuir, vol. 16, No. 11, 2000, pp. 5154-5158.
Luo, et al., “Dishing Effects during Chemical Mechanic
Babu Suryadevara Vijayakumar
Chandra Sunil
Hedge Sharath
Hong Young-ki
Nimmala Sreehari
Climax Engineered Materials, LLC
Dahimene Mahmoud
Fennemore Craig P.C.
Norton Nadine G
LandOfFree
Polishing slurries and methods for chemical mechanical... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polishing slurries and methods for chemical mechanical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing slurries and methods for chemical mechanical... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4142480