Polishing slurries and a process for the production thereof

Cleaning and liquid contact with solids – Processes – Using solid work treating agents

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134 13, 134 2, 51308, 451 38, B08B7/00

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059041595

ABSTRACT:
A polishing slurry is formed of a silica-dispersed solution obtained by dispersing, in an aqueous solvent, a fumed silica having an average primary particle size of from 5 to 30 nm, the silica-dispersed solution exhibiting a light scattering index (n) of from 3 to 6 at a silica concentration of 1.5% by weight, and the fumed silica dispersed therein having an average secondary particle size of from 30 to 100 nm on the weight basis. The polishing slurry is produced by pulverizing, using a high-pressure homogenizer, a silica-dispersed solution obtained by dispersing a fumed silica in an aqueous solvent, so that the fumed silica possesses an average secondary particle size of from 30 to 100 nm on the weight basis. The polishing slurry is used for polishing semiconductor wafers and inter-layer dielectric in an IC process.

REFERENCES:
patent: 5246624 (1993-09-01), Miller et al.
patent: 5264010 (1993-11-01), Brancaleoni et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5605490 (1997-02-01), Laffey et al.
patent: 5697992 (1997-12-01), Ueda et al.
New Ceramics No. 2, pp. 45-51 (partial English translation) (1995).
Journal of the Ceramic Society of Japan 101(6) 707-712 (1993). (a summary in English).

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