Polishing silicon wafers with improved polishing slurries

Details Polishing silicon wafers with improved polishing slurries Polishing silicon wafers with improved polishing slurries

1996-11-27

1999-01-19

Rose, Robert A.

Abrading

Abrading process

Utilizing fluent abradant

451 41, 451 63, 451285, 451286, 451287, 451288, 451289, B24B 104

Patent

active

058608486

ABSTRACT:
An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles at about 0.02 to about 0.5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm and an iron, nickel and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.

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Hahn, P.O. et al, "The Si-SiO.sub.2 Interface Roughness: Causes and Effects", The Physics & Chemistry of SiO.sub.2 and the Si-SiO.sub.2 Interface, pp. 401-411, Plenum Press, N.Y. 1988.

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