Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-01-29
2008-01-29
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C451S041000
Reexamination Certificate
active
07323415
ABSTRACT:
An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoints detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate11for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part12fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (β-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle. In addition, the laminated body for polishing of the present invention comprises a supporting layer on a backside of the polishing pad. These polishing pad and laminated body for polishing can comprise a fixing layer13on a backside.
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Hasegawa Kou
Hosaka Yukio
Kawahashi Nobuo
Shiho Hiroshi
Chen Kin-Chan
JSR Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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