Polishing pad for semiconductor wafer and polishing process...

Abrading – Abrading process – Glass or stone abrading

Reexamination Certificate

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Details

C451S287000, C451S288000, C451S526000, C451S528000, C451S529000, C451S533000, C451S538000, C451S539000

Reexamination Certificate

active

06848974

ABSTRACT:
An object of the present invention is to provide a polishing pad for a semiconductor wafer which can perform a stable polishing while preventing a polishing layer from floating up from a supporting layer and a surface of a polishing pad from bending during polishing using a polishing pad having a multi-layered structure of a polishing layer and a supporting layer, and a polishing process using thereof. The polishing pad of the present invention is characterized in that it is comprising a supporting layer which is a non-porous elastic body and a polishing layer which is laminated on one surface of the supporting layer, and a polishing process using thereof. Shore D hardness of the polishing layer is preferably 35 or more, and hardness of the supporting layer is preferably lower than that of the polishing layer.

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