Polishing pad apparatus and methods

Abrading – Flexible-member tool – per se – Interrupted or composite work face

Reexamination Certificate

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Details

C451S539000

Reexamination Certificate

active

06899612

ABSTRACT:
Polishing pads having a surface morphology that results in a high degree of planarization efficiency when planarizing a wafer surface are disclosed. One conditioned polishing pad is non-porous and has a surface height distribution with a surface roughness Ra<3 microns. Another conditioned polishing pad is porous and has a surface height probability distribution with a pad surface height Ratio R≧60%, or alternatively has an asymmetric surface height probability distribution characterized by an asymmetry factor A10≦0.50. Methods of pad conditioning and planarizing a wafer using the polishing pads are also disclosed.

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Lawing, A. Scott, “Pad Conditioning and Pad Surface Characterization in Oxide Chemical Mechanical Polishing”, The Materials Research Society, Spring Meeting Proceedings, Feb. 2002.
Lawing, A. Scott, “Pad Conditioning and Removal Rate in Oxide Chemical Mechanical Polishing”, Proceedings of the Seventh International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, Santa Clara, CA, Feb. 27-Mar. 1, 2002.
Lawing, A. Scott, “Polish Rate, Pad Surface Morphology and Pad Conditioning in Oxide Chemical Mechanical Polishing”, Proceedings of the Fifth Internaional Symposium on Chemical Mechanical Polsihing, May 12-17, 2002.

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