Polishing method, semiconductor device fabrication method, and s

Details Polishing method, semiconductor device fabrication method, and s Polishing method, semiconductor device fabrication method, and s

1996-11-12

2000-05-30

Gulakowski, Randy

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438970, 216 38, 216 89, H01L 21302

Patent

active

060690836

ABSTRACT:
Chemical mechanical polisher is disclosed. A polishing slurry stored in a polishing slurry tank, used in this polishing contains a solvent and polishing particles dispersed in the solvent. The polishing particles are selected from silicon nitride, silicon carbide, and graphite. The material to be polished is polished by using a polishing slurry containing silicon nitride particles until a silicon nitride etch stop layer is reached.

REFERENCES:
patent: 4690693 (1987-09-01), Dobbs et al.
patent: 4954142 (1990-09-01), Carr et al.
patent: 5032203 (1991-07-01), Doy et al.
patent: 5084071 (1992-01-01), Nenadic et al.
patent: 5213591 (1993-05-01), Celikkaya et al.
patent: 5246884 (1993-09-01), Jaso et al.
patent: 5352254 (1994-10-01), Celikkaya
patent: 5354490 (1994-10-01), Yu et al.
patent: 5376222 (1994-12-01), Miyajima et al.
patent: 5603739 (1997-02-01), Neuland
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5643837 (1997-07-01), Hayashi
patent: 5721172 (1998-02-01), Jang et al.
patent: 5733819 (1998-03-01), Kodama et al.
patent: 5738800 (1998-04-01), Hosali et al.
patent: 5759917 (1998-06-01), Grover et al.
Abstract of Japan Patent Application Kokai Publication No. 61-271376, Patent Abstracts of Japan, vol. 011, No. 136 (C-419), Apr. 30, 1987.

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