Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-02-27
2007-02-27
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C257SE21230
Reexamination Certificate
active
10898252
ABSTRACT:
Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.
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Fujimori Masaaki
Hom-ma Yoshio
Kondo Seiichi
Sakuma Noriyuki
Geyer Scott B.
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Renesas Technology Corp.
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