Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-01-04
2008-12-02
Smith, Zandra (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C451S285000, C451S289000
Reexamination Certificate
active
07459397
ABSTRACT:
During the polishing of a semiconductor substrate, the semiconductor wafer that has been reduced in thickness, and hence in strength, by polishing, suffers outer-surface damage (or cracking) due to the initial damage caused by the use of polishing quartz. In order to solve these problems, the present invention applies a semiconductor substrate fixing jig formed with, on the face for fixing the semiconductor substrate, a groove(s) of almost the same diameter as that of the semiconductor substrate. Semiconductor substrate damage and cracking can be suppressed by applying this jig.
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Harpreet Singh Hura
Mukaikubo Masaru
Sakuma Yasushi
Uchida Kenji
Washino Ryu
Antonelli, Terry Stout & Kraus, LLP.
OpNext Japan, Inc.
Rodgers Colleen E
Smith Zandra
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