Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-08-02
2011-08-02
Tran, Binh X (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000, C216S084000, C216S089000
Reexamination Certificate
active
07989348
ABSTRACT:
A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput. The polishing method for polishing workpieces by repeating the sequential operations of taking a workpiece out of a cassette in which a plurality of workpieces are stored, carrying out multi-step polishing of a surface of the workpiece and returning the workpiece to the cassette, includes carrying out one of the following two polishing processes for the workpiece taken out of the cassette: a first polishing process comprising carrying out the multi-step polishing under preset conditions and measurement of the surface of the workpiece before and after each polishing step; and a second polishing process comprising carrying out a predetermined step of the multi-step polishing under polishing conditions which have been modified based on the results of the measurement.
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Torikoshi Tsuneo
Yamaguchi Kuniaki
Ebara Corporation
Tran Binh X
Wenderoth , Lind & Ponack, L.L.P.
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