Polishing method

Details Polishing method Polishing method

2011-06-14

2011-06-14

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

C438S017000, C438S691000, C438S692000, C257S752000, C257S762000, C257SE21521, C257SE21529, C257SE21583, C324S230000

Reexamination Certificate

active

07960188

ABSTRACT:
A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film. During the second polishing process and the third polishing process, a polishing state of the substrate is monitored with an eddy current sensor, and the third polishing process is terminated when an output signal of the eddy current sensor reaches a predetermined threshold.

REFERENCES:
patent: 6663469 (2003-12-01), Kimura et al.
patent: 6811466 (2004-11-01), Swedek et al.
patent: 7046001 (2006-05-01), Tada et al.
patent: 7112960 (2006-09-01), Miller et al.
patent: 2005/0142991 (2005-06-01), Nakao et al.
patent: 2007/0020918 (2007-01-01), Hirokawa et al.
patent: 2008/0254714 (2008-10-01), Torikoshi
patent: 2009/0277867 (2009-11-01), Mayer et al.

Affiliated with

Also associated with

Rating

Polishing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polishing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2722425