Polishing method

Details Polishing method Polishing method

2007-01-16

2007-01-16

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S977000

Reexamination Certificate

active

10481019

ABSTRACT:
The present invention is relates to a polishing method for polishing a semiconductor wafer (W) by pressing the semiconductor wafer (W) against a polishing surface (10) with use of a top ring (23) for holding the semiconductor wafer (W). A pressure chamber (70) is defined in the top ring (23) by attaching an elastic membrane (60) to a lower surface of a vertically movable member (62). The semiconductor wafer (W) is polished while a pressurized fluid is supplied to the pressure chamber (70) so that the semiconductor wafer (W) is pressed against the polishing surface (10) by a fluid pressure of the fluid. The semiconductor wafer (W) which has been polished is released from the top ring (23) by ejecting the pressurized fluid from an opening (62a) defined centrally in the vertically movable member (62).

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