Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-10-30
2000-09-12
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438691, 438692, 438693, 438745, 438754, H01L 21302
Patent
active
06117775&
ABSTRACT:
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5676760 (1997-10-01), Aoki et al.
patent: 5695660 (1997-12-01), Litvak
patent: 5733176 (1998-03-01), Robinson et al.
patent: 5759917 (1998-06-01), Grover
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5840629 (1998-11-01), Carpio
patent: 5858813 (1999-01-01), Scherber et al.
patent: 5866031 (1999-02-01), Carpio et al.
"Pattern Geometry Effects in the Chemical-Mechanical Polishing of Inlaid Copper Structures", J. Electrochem.Soc., vol. 141 p. 2842-2848, Oct. 10, 1994.
"An Examination of Slurry for Wiring Metal's Chemical Mechanical Polishing", vol. 41, p35-37, Jun. 1997 (in Japanese).
"Semiconductor International", Semiconductor World, p. 171-172, May 1995 (in Japanese).
"Electrochemical Potentioal Measurements during the chemical-mechanical Polishing of Copper Thin Films",J.Electrochem.Soc.,vol.142, Jul. 7, 1995.
Chemical Mechanical Polishing of Copper using a Slurry composed of glycine and hydrogen peroxide:, CMP-MIC Conferences 1996 ISMIC, Feb. 22-23, 1996 CMP P.299-300, (in Japanese language) p. 387 English.
Hinode Kenji
Hom-ma Yoshio
Kondo Seiichi
Sakuma Noriyuki
Takeda Ken'ichi
Hitachi , Ltd.
Tran Binh X
Utech Benjamin L.
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