Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-01-15
2008-01-15
Deo, Duy-Vu N (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
11352326
ABSTRACT:
This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and. water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.
REFERENCES:
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5733176 (1998-03-01), Robinson et al.
patent: 5783489 (1998-07-01), Kaufman et al.
patent: 5858513 (1999-01-01), Jessen
patent: 5876490 (1999-03-01), Ronay
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6063306 (2000-05-01), Kaufman et al.
patent: 6171352 (2001-01-01), Lee et al.
patent: 6238592 (2001-05-01), Hardy et al.
patent: 6326299 (2001-12-01), Homma et al.
patent: 0 649 168 (1995-04-01), None
patent: 0 846 742 (1998-06-01), None
patent: 0 896 042 (1999-02-01), None
patent: 0 913 442 (1999-05-01), None
patent: 0939431 (1999-09-01), None
patent: 1 125 999 (2001-08-01), None
patent: 10-298538 (1998-11-01), None
patent: 11-021546 (1999-01-01), None
patent: 2001-015463 (2001-01-01), None
patent: WO 98/18159 (1998-04-01), None
patent: WO 98/26025 (1998-06-01), None
patent: WO 99/64527 (1999-12-01), None
patent: WO 01/83638 (2001-11-01), None
Japanese Official Action, dated Dec. 13, 2005, issued in corresponding Japanese Patent Application No. 2001-517419 (w/English translation).
Wang, et al., “Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing”, Preparation and Characterization, vol. 308-309, Oct. 31, 1997, pp. 518-522.
Supplementary European Search report dated Feb. 27, 2007, for Application No. 00953466.0—1235 PCT/JP0005508.
Igarashi Akiko
Kamigata Yasuo
Kurata Yasushi
Terasaki Hiroki
Uchida Takeshi
Antonelli, Terry Stout & Kraus, LLP.
Deo Duy-Vu N
Hitachi Chemical Company Ltd.
LandOfFree
Polishing medium for chemical-mechanical polishing, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polishing medium for chemical-mechanical polishing, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing medium for chemical-mechanical polishing, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3928437