Polishing medium for chemical-mechanical polishing, and...

Details Polishing medium for chemical-mechanical polishing, and... Polishing medium for chemical-mechanical polishing, and...

2008-01-15

2008-01-15

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

07319072

ABSTRACT:
This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and. water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.

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