Polishing compound for semiconductor integrated circuit...

Details Polishing compound for semiconductor integrated circuit... Polishing compound for semiconductor integrated circuit...

2007-09-17

2011-10-04

Deo, Duy (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

C438S690000, C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

08030213

ABSTRACT:
To provide a polishing technique with which in production of a semiconductor integrated circuit device, when a plane to be polished is polished, an appropriate polishing rate ratio of a polysilicon film to another material can be obtained, whereby high level planarization of a plane to be polished including a polysilicon film can be realized.A polishing compound for chemical mechanical polishing, containing cerium oxide particles, a water-soluble polyamine and water and having a pH within a range of from 10 to 13, is used.

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