Polishing composition for semiconductor wafers

Details Polishing composition for semiconductor wafers Polishing composition for semiconductor wafers

2006-06-06

2006-06-06

Owens, Douglas W (Department: 2811)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000

Reexamination Certificate

active

07056829

ABSTRACT:
An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.

REFERENCES:
patent: 2003/0102457 (2003-06-01), Miller

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