Polishing composition and polishing method using the same

Details Polishing composition and polishing method using the same Polishing composition and polishing method using the same

2006-05-30

2006-05-30

Marcheschi, Michael A. (Department: 1755)

Abrasive tool making process, material, or composition

With inorganic material

Clay, silica, or silicate

C106S003000, C106S005000, C438S692000, C438S693000

Reexamination Certificate

active

07052522

ABSTRACT:
A polishing composition of the present invention, which is used in polishing the edge of a wafer for semiconductor devices, effectively suppresses remaining amounts of abrasives on the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The average primary particle diameter DSAof the silicon dioxide is at least 40 nm. The ratio D95/D5of the silicon dioxide is no more than 3.8. The value D95/D5/DSAof the silicon dioxide is no more than 0.07.

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