Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2009-02-02
2010-12-07
Ahmed, Shamim (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S690000, C438S691000, C438S693000, C216S088000, C216S089000, C252S079100, C051S307000
Reexamination Certificate
active
07846842
ABSTRACT:
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
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Carter Phillip W.
Johns Timothy
Ahmed Shamim
Cabot Microelectronics Corporation
Koszyk Francis J.
Ombolt Thomas E.
Weseman Steven D.
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