Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...
Reexamination Certificate
2007-03-13
2007-03-13
Webb, Gregory (Department: 1751)
Cleaning compositions for solid surfaces, auxiliary compositions
Cleaning compositions or processes of preparing
For cleaning a specific substrate or removing a specific...
C252S079100, C438S692000
Reexamination Certificate
active
10476717
ABSTRACT:
A polishing composition capable of satisfactorily polishing a semiconductor. The first polishing composition of the present invention includes silicon dioxide, at least one component selected from periodic acids and salts thereof, at least one component selected from tetraalkyl ammonium hydroxides and tetraalkyl ammonium chlorides, hydrochloric acid, and water, and contains substantially no iron. The second polishing composition of the present invention includes a predetermined amount of fumed silica, a predetermined amount of at least one component selected from periodic acids and salts thereof, a tetraalkyl ammonium salt represented by the following general formula (1), at least one component selected from ethylene glycol and propylene glycol, and water. The pH of the second polishing composition is greater than or equal to 1.8 and is less than 4.0.
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U.S. Appl. No. 08/982,933.
Horikawa Chiyo
Ina Katsuyoshi
Ohno Koji
Sakai Kenji
Tamai Kazusei
Fujimi Incorporated
Vidas, Arrett & Steinkraus PA
Webb Gregory
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