Polishing composition

Abrasive tool making process – material – or composition – With inorganic material – Clay – silica – or silicate

Reexamination Certificate

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Details

C106S003000, C106S005000, C438S692000, C438S693000

Reexamination Certificate

active

10934670

ABSTRACT:
The present invention relates to a polishing composition that can be preferably used to polish a silicon wafer. The polishing composition includes a block polyether represented by the chemical formula HO—(EO)a—(PO)b—(EO)c—H, wherein EO represents an oxyethylene group, PO represents an oxypropylene group, each of a and c represents the polymerization degree of ethylene oxide, b represents the polymerization degree of propylene oxide, and each of a, b, and c is an integer of 1 or greater; silicon dioxide; a basic compound; at least either one of hydroxyethyl cellulose and polyvinyl alcohol; and water.

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