Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-05-12
2000-03-14
Koslow, C. Melissa
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438693, 51307, 51309, 451 41, 451 28, 451 36, 29 9001, C07K 1300
Patent
active
060372605
ABSTRACT:
The present invention provides a polishing composition which comprises 100 weight part of water; 0.5 to 20 weight part of boehmite, a hydroxide of aluminum, pseudoboehmite or mixtures thereof; 1 to 50 weight part of aluminum oxide (Al.sub.2 O.sub.3); and 1 to 20 weight part of an acidic solution. The polishing composition of the present invention is a thixotropic fluid and displays satisfactory suspension properties. Therefore, it is very suitable for use as a polishing slurry.
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Chen Li-Mei
Chen Ying-Tsung
Hsieh Chiu-Chih
Tsai Ming-Shyong
Yeh Yue-Chin
A-Green Corporation
Chang Chun Petrochemical Corporation
China Petrochemical Development Corporation
China Steel Corporation
Chinese Petroleum Corporation
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