Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-06-27
2000-09-05
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438693, H01L 21302
Patent
active
061142476
ABSTRACT:
A method of fabricating a semiconductor device includes a step of polishing a surface of a substrate by a chemical mechanical polishing process conducted on a polishing cloth by a slurry. The polishing is conducted so that projections having a height of about 30 .mu.m or less are formed on the polishing cloth with an interval of about 55 .mu.m or less as a result of the polishing.
REFERENCES:
patent: 5167667 (1992-12-01), Prigge et al.
patent: 5728308 (1998-03-01), Muroyama
patent: 5763325 (1998-06-01), Kishii et al.
patent: 5779521 (1998-07-01), Muroyama et al.
Arimoto Yoshihiro
Kishii Sadahiro
Nakamura Ko
Chen Kin-Chan
Fujitsu Limited
Utech Benjamin L.
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