Polishing cloth for use in a CMP process and a surface treatment

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438693, H01L 21302

Patent

active

061142476

ABSTRACT:
A method of fabricating a semiconductor device includes a step of polishing a surface of a substrate by a chemical mechanical polishing process conducted on a polishing cloth by a slurry. The polishing is conducted so that projections having a height of about 30 .mu.m or less are formed on the polishing cloth with an interval of about 55 .mu.m or less as a result of the polishing.

REFERENCES:
patent: 5167667 (1992-12-01), Prigge et al.
patent: 5728308 (1998-03-01), Muroyama
patent: 5763325 (1998-06-01), Kishii et al.
patent: 5779521 (1998-07-01), Muroyama et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Polishing cloth for use in a CMP process and a surface treatment does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polishing cloth for use in a CMP process and a surface treatment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polishing cloth for use in a CMP process and a surface treatment will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2211920

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.