Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...
Patent
1997-08-21
1999-04-06
Utech, Benjamin
Etching a substrate: processes
Nongaseous phase etching of substrate
Using film of etchant between a stationary surface and a...
216 89, H01L 21302, B44C 122
Patent
active
058913530
ABSTRACT:
A semiconductor wafer polishing agent contains mainly a silica containing polishing agent and is added with a polyolefin type fine particle material. The novel semiconductor wafer polishing agent is capable of low brightness polishing to the back face of the wafer, sensor detection of the front and back faces of the wafer, and suppression of dust to be generated by chipping of the back face of the wafer, thereby to increase the yield of semiconductor devices. A polishing method using the polishing agent and a novel semiconductor wafer having a back face with an unconventional surface shape are also disclosed.
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Fukami Teruaki
Kudo Hideo
Masumura Hisashi
Suzuki Kiyoshi
Goudreau George
Shin-Etsu Handotai Co, Ltd.
Utech Benjamin
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