Polishing agent used for polishing semiconductor silicon wafers

Details Polishing agent used for polishing semiconductor silicon wafers Polishing agent used for polishing semiconductor silicon wafers

1998-12-11

2000-05-09

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 89, 252 795, 438745, 438753, H01L 2100

Patent

active

060603968

ABSTRACT:
A semiconductor silicon wafer polishing agent and a polishing method using the same are provided for avoiding the need for an increased purity of a polishing agent which may cause a prohibitively high cost, while still preventing semiconductor wafers from being contaminated by metals, particularly by copper and nickel, in a polishing process. The semiconductor silicon wafer polishing agent comprises a silica containing polishing agent as a main component, and Cu and Ni respectively in concentration of 0.01 to 1 ppb with respect to the total amount of the polishing agent.

REFERENCES:
patent: 3951710 (1976-04-01), Basi
patent: 5230833 (1993-07-01), Romberger et al.
patent: 5885334 (1999-03-01), Suzuki et al.

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