Polishing agent for semiconductor and method for its production

Details Polishing agent for semiconductor and method for its production Polishing agent for semiconductor and method for its production

1998-04-16

2000-09-19

Marcheschi, Michael

Abrasive tool making process, material, or composition

With inorganic material

Metal or metal oxide

51307, 106 3, 438693, 423263, C09K 314, C09C 168, C09G 102

Patent

active

061205710

ABSTRACT:
A polishing agent for semiconductor, comprising cerium oxide particles having a weight average particle size of from 0.1 to 0.35 .mu.m and a crystallite size of from 150 to 600 .ANG..

REFERENCES:
patent: 3429080 (1969-02-01), Lachapelle
patent: 5011671 (1991-04-01), Le Loarer
patent: 5389352 (1995-02-01), Wang
patent: 5468682 (1995-11-01), Homma
patent: 5543126 (1996-08-01), Ota et al.
patent: 5597341 (1997-01-01), Kodera et al.
patent: 5697992 (1997-12-01), Ueda et al.
patent: 5766279 (1998-06-01), Ueda et al.
Patent Abstracts of Japan, vol. 096, No. 009, Sep. 30, 1996, JP 08 134435, May 28, 1996.

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