Polishing agent and polishing method using the same

Details Polishing agent and polishing method using the same Polishing agent and polishing method using the same

1995-07-11

1998-06-23

Chea, Thorl

Etching a substrate: processes

Planarizing a nonplanar surface

216103, 216105, 438633, 438692, 438693, H01L 2100, C23F 100, B44C 122

Patent

active

057700958

ABSTRACT:
The present invention provides a polishing method including the steps of forming a film made of material containing a metal as a main component over a substrate having depressed portions on a surface thereof so as to fill the depressed portions with the film, and polishing the film by a chemical mechanical polishing method using a polishing agent containing a chemical agent responsible for forming a protection film on a surface of the film by reacting with the material containing a metal as a main component, thereby forming a conductive film in the depressed portions. The present invention also provides a polishing agent, which is used in forming a film made of material containing a metal as a main component in depressed portions of a substrate having depressed portions on a surface thereof by using a chemical mechanical polishing method, including a chemical agent responsible for forming a protection film on the surface of a substrate to be polished by reacting with the material containing a metal as a main component.

REFERENCES:
patent: 4251384 (1981-02-01), Rooney
patent: 4954142 (1990-09-01), Carr et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 5575885 (1996-11-01), Hirabayashi et al.
Materials Research Society Symposium Proceedings, vol. 337, Apr. 4-8, 1994, pp. 133-138, J.M. Steigerwald, et al., "Surface Layer Formation During The Chemical Mechanical Polishing of Copper Thin Films".

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