Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-01-27
2008-10-14
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21546, C257S524000
Reexamination Certificate
active
07435661
ABSTRACT:
A method and resulting device that eliminates vertical steps or gaps in a deep trench isolation region and, thus, eliminates or drastically reduces a possibility of polysilicon stringers. Additionally, the invention allows an inexpensive dielectric material, for example a lower-quality silicon dioxide to be used to fill the deep trench and a higher quality oxide, in an electrically active region, to be used on an uppermost portion of the deep trench without affecting device performance or increasing a possibility of forming polysilicon stringers.
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Wolf and Tauber, Silicon Processing for the VLSI Era: vol. 1—Process Technology 2ndEdition, 2000, pp. 202-206.
Brown Eric
Miller Gayle
Atmel Corporation
Schwegman Lundberg & Woessner, P.A.
Taylor Earl N
Vu David
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