Polish pressure modulation in CMP to preferentially polish raise

Abrading – Abrading process – Glass or stone abrading

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451 36, 451 63, 451160, B24B 100

Patent

active

061296104

ABSTRACT:
A chemical-mechanical planarization (CMP) process is provided whereby cyclical pressure means varies the force against the wafer and polishing pad during the planarizing operation with the planarizing pad specially defined to have a relaxation time which is correlated with the force cycle so that the planarizing is enhanced. The relaxation time of the pad is greater than the downward an/or upward force cycle time on the wafer or pad and provides a planarizing process wherein the height of the pad during planarization is intermediate between a decompressed pad position and a compressed pad position typically encountered in a conventional CMP process.

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