Polish planarizing using oxidized boron nitride as a polish stop

Fishing – trapping – and vermin destroying

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437236, 437228, 156636, H01L 2128, H01L 21304

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053858662

ABSTRACT:
Polishing of a non-planar surface layer on a semiconductor substrate is conducted by providing an oxidized boron nitride polish stop layer on the semiconductor substrate, forming the non-planar surface layer on the oxidized boron nitride polish stop layer, the oxidized boron nitride polish stop layer being polish selective relative to the non-planar surface layer, and polishing the non-planar surface layer until the oxidized boron nitride polish stop layer is reached.

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"Auger Electron Spectroscopy/Scanning Auger Microanalysis", Modern Methods of Analytical Chemistry, The Analytical Laboratories, The Dow Chemical Company, compiled by C. E. Van H all, 1985, pp. 41-43.
IBM TDB entitled "Improved Isolation and Gate Level Formation Process", by H. Ng, et al., No. 11, 04-92, pp. 197-199, Apr. 1992.

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