Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-06-21
2011-06-21
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000, C257SE33005, C257SE33068
Reexamination Certificate
active
07964877
ABSTRACT:
A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.
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Japanese Notice of Office Action, with English Translation, issued in Japanese Patent Application No. 2007-156212, dated Jan. 18, 2011.
Kim Dae Yeon
Lee Su Yeol
Yoon Sang Ho
McDermott Will & Emery LLP
Samsung Electro-Mechanics Co. Ltd.
Vu Hung
Webb Vernon P
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